Optics and Photonics Research Faculty
Director, Center for Compound Semiconductors, Georgia Research Alliance Eminent Scholar
e-mail: russell.dupuis@ece.gatech.edu phone: 404-385-6094Optics + Photonics Research Area Affiliations
Research Summary
Prof. Dupuis’ research encompasses many aspects of III-V compound semiconductor epitaxial materials growth and characterization, as well as device design, processing, and testing. Particular emphasis is placed upon the wide-bandgap GaN-based semiconductors and novel quantum-well and quantum-dot structures, including self-assembled nanoheterostructures.
Biographical Sketch
Prof. Dupuis earned his B.S. (with Highest Honors-Bronze Tablet), his M.S., and his Ph.D. in Electrical Engineering from the University of Illinois at Urbana-Champaign. His alma mater has distinguished him with the University of Illinois at Urbana-Champaign Alumni Loyalty Award and the Distinguished Alumnus Award from the Department of Electrical and Computer Engineering and the College of Engineering.
Prof. Dupuis joined Georgia Tech in 2003 here he has established the Center for Compound Semiconductors and the Advanced Materials and Devices Group. His most recent work involves the MOCVD growth of heteroepitaxial InAlGaN films and devices, the growth of InAlGaAsP-InP lasers, InAlGaP-GaAs vertical-cavity surface-emitting lasers, and InGaAs-InP heterojunction field-effect transistors. In addition, he is exploring the III-V quantum-dot nanostructure materials. His technical specialties include semiconductor materials and devices, epitaxial growth by MOCVD, and heterojunction devices in III-V compound semiconductors.
Prior to joining Georgia Tech, from 1989-2003, Prof. Dupuis held the Judson S. Swearingen Regents Chair in Engineering in the Department of Electrical and Computer Engineering at the University of Texas at Austin. Prior to joining academia, Dr. Dupuis was in industry positions at AT&T Bell Laboratories, Rockwell International, and Texas Instruments. At Rockwell International, he achieved a number of firsts, including using metalorganic chemical vapor deposition (MOCVD) to grow high-quality semiconductor thin films and devices, including the first high-performance MOCVD-grown solar cells and LEDs. He also grew high quality AlGaAs-GaAs conventional and quantum-well heterostructures by MOCVD, and for the first time, demonstrated room-temperature CW operation of AlGaAs-GaAs quantum-well injection lasers and established that such lasers are reliable enough for practical use.
Dr. Dupuis has received many awards and distinctions throughout his career, including the National Medal of Technology in 2002. He is a member of the National Academy of Engineering and is a Fellow of the IEEE, the American Physical Society, the American Association for the Advancement of Science, and the Optical Society of America. An author of more than 350 technical papers in refereed journals and a sought-after lecturer, Dr. Dupuis has held numerous leadership positions within IEEE/LEOS and with various conferences and workshops associated with the microsystems and optics and photonics areas.
